Publication Information

Title:
Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
Type:
Journal
Info:
Physics Procedia 32 (2012) 379-388
Date:
2012-06-30

Author Information

Name Institution
Qi FangOxford Instruments
Chris HodsonOxford Instruments
M. LiuChinese Academy of Sciences
Ziwen FangUniversity of Liverpool
Richard PotterUniversity of Liverpool
R. GunnOxford Instruments

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Characteristic: Unknown
Analysis: Anneal

Substrates

Silicon

Keywords

High-k Dielectric Thin Films
Doping

Notes

Oxford Instruments FlexAL PEALD TiO2 doped Ta2O5 high-k dielectric study.
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