Publication Information

Title:
Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 158(2) G21-G26 (2011)
Date:
2010-10-27

Author Information

Name Institution
K. B. JineshNXP Semiconductors Research
J. L. van HemmenEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology
J. H. KlootwijkEindhoven University of Technology
W. F. A. BeslingNXP Semiconductors Research
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Substrates

Silicon

Keywords

Notes

Films annealed in forming gas at 450C for 30 minutes prior to metal electrode deposition.
As deposited films compared to annealed films.
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