Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells

Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 08MB11 (2017)
Date:
2017-04-25
DOI:
https://doi.org/10.7567/JJAP.56.08MB11

Author Information

Name Institution
Woojun YoonU.S. Naval Research Laboratory
James MooreGeorge Washington University
Anthony LochtefeldAmberWave Inc.
Nicole KotulakU.S. Naval Research Laboratory
David ScheimanU.S. Naval Research Laboratory
Allen BarnettUniversity of New South Wales
Phillip JenkinsU.S. Naval Research Laboratory
Robert WaltersU.S. Naval Research Laboratory

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Passivation
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

1046