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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(3), May/Jun 2014
Date:
2013-07-15
DOI:
http://dx.doi.org/10.1116/1.4818254

Author Information

Name Institution
Nelson Y. GarcesU.S. Naval Research Laboratory

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Notes

195