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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(3), May/Jun 2014
Date:
2013-07-15
Author Information
| Name | Institution |
|---|---|
| Nelson Y. Garces | U.S. Naval Research Laboratory |
Films
Plasma Al2O3
Plasma TiO2
Film/Plasma Properties
Substrates
Keywords
Notes
| 195 |