Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

Type:
Journal
Info:
J. Appl. Phys. 116, 064503 (2014)
Date:
2014-07-21

Author Information

Name Institution
N. AslamPeter-Grünberg Institute
Valentino LongoEindhoven University of Technology
C. RodenbücherPeter-Grünberg Institute
Fred RoozeboomEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
K. SzotPeter-Grünberg Institute
R. WaserPeter-Grünberg Institute
Susanne Hoffmann-EifertPeter-Grünberg Institute

Films


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: -

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: Local-Conductivity Atomic Force Microscopy

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Substrates

Pt

Keywords

Resistive Switch
High-k Dielectric Thin Films

Notes

Oxford Instruments FlexAL PEALD SrTiO3 for resistive switching application.
600C post deposition anneal in N2 for crystallization into perovskite structure.
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