
Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
Type:
Journal
Info:
J. Appl. Phys. 116, 064503 (2014)
Date:
2014-07-21
Author Information
Name | Institution |
---|---|
N. Aslam | Peter-Grünberg Institute |
Valentino Longo | Eindhoven University of Technology |
C. Rodenbücher | Peter-Grünberg Institute |
Fred Roozeboom | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
K. Szot | Peter-Grünberg Institute |
R. Waser | Peter-Grünberg Institute |
Susanne Hoffmann-Eifert | Peter-Grünberg Institute |
Films
Plasma SrTiO3
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: -
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: Local-Conductivity Atomic Force Microscopy
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Substrates
Pt |
Notes
Oxford Instruments FlexAL PEALD SrTiO3 for resistive switching application. |
600C post deposition anneal in N2 for crystallization into perovskite structure. |
258 |