1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices

Type:
Journal
Info:
Nanotechnology 27 (2016) 275205
Date:
2016-05-06
DOI:
https://doi.org/10.1088/0957-4484/27/27/275205

Author Information

Name Institution
Nazek El-AtabMasdar Institute of Science and Technology Abu Dhabi
Ammar NayfehMasdar Institute of Science and Technology Abu Dhabi

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Al2O3

Notes

1153