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Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks

Type:
Conference Proceedings
Info:
2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
Date:
2010-06-20
DOI:
http://dx.doi.org/10.1109/PVSC.2010.5614132

Author Information

Name Institution
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)
Boris VeithInstitute for Solar Energy Research Hamelin (ISFH)
Florian WernerInstitute for Solar Energy Research Hamelin (ISFH)
D ZielkeInstitute for Solar Energy Research Hamelin (ISFH)
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)

Films

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-260C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-260C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Passivation
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Open Circuit Voltage
Analysis: Custom
Diagnostic: -

Characteristic: Short Circuit Current
Analysis: Custom
Diagnostic: -

Characteristic: Fill Factor
Analysis: Custom
Diagnostic: -

Characteristic: Efficiency
Analysis: Custom
Diagnostic: -

Substrates

Silicon

Notes

714