Publication Information

Title:
Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01B103 (2018)
Date:
2017-08-24

Author Information

Name Institution
Shashank BalasubramanyamEindhoven University of Technology
Akhil SharmaEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Harm C. M. KnoopsOxford Instruments
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma WO3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Band Gap
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Keywords

Notes

1021