
Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01B103 (2018)
Date:
2017-08-24
Author Information
Name | Institution |
---|---|
Shashank Balasubramanyam | Eindhoven University of Technology |
Akhil Sharma | Eindhoven University of Technology |
Vincent Vandalon | Eindhoven University of Technology |
Harm C. M. Knoops | Oxford Instruments |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Ageeth A. Bol | Eindhoven University of Technology |
Films
Plasma WO3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Band Gap
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
Silicon |
Notes
1021 |