Publication Information

Title: Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 01B103 (2018)

Date: 2017-08-24

DOI: http://dx.doi.org/10.1116/1.4986202

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Oxford Instruments

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 100-400C

406462-43-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Refractive Index

Ellipsometry

J.A. Woollam M-2000U

Extinction Coefficient

Ellipsometry

J.A. Woollam M-2000U

Band Gap

Ellipsometry

J.A. Woollam M-2000U

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific KA1066 spectrometer

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Density

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

NT-MDT Solver P47SPM

Substrates

Silicon

Keywords

Notes

1021



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