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Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer

Type:
Journal
Info:
J. Phys. Chem. C
Date:
2015-12-07
DOI:
http://dx.doi.org/10.1021/acs.jpcc.5b09994

Author Information

Name Institution
Eran EdriLawrence Berkeley National Laboratory
Heinz FreiLawrence Berkeley National Laboratory

Films

Plasma CoOx

Hardware used: Oxford Instruments FlexAL
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 40C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI TitanX 60-300

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI TitanX 60-300

Characteristic: Unknown
Analysis: ATR-FTIR
Diagnostic: Bruker Vertex 70

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Unknown
Analysis: CV, Cyclic Voltammetry
Diagnostic: CH Instruments, CHI604E

Substrates

Silicon

Notes

Cambridge NanoTech Savannah used a MeaGlow hollow cathode plasma source.
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