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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date:
2015-11-05
Author Information
| Name | Institution |
|---|---|
| Golnaz Karbasian | University of Notre Dame |
| Michael S. McConnell | University of Notre Dame |
| Alexei O. Orlov | University of Notre Dame |
| Sergei Rouvimov | University of Notre Dame |
| Gregory L. Snider | University of Notre Dame |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| Ni |
Keywords
Notes
| 412 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |