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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date:
2015-11-05
Author Information
| Name | Institution |
|---|---|
| Golnaz Karbasian | University of Notre Dame |
| Michael S. McConnell | University of Notre Dame |
| Alexei P. Orlov | University of Notre Dame |
| Sergei Rouvimov | University of Notre Dame |
| Gregory L. Snider | University of Notre Dame |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| Ni |
Keywords
Notes
| 412 |