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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date:
2015-11-05
Author Information
| Name | Institution |
|---|---|
| Golnaz Karbasian | University of Notre Dame |
| Michael S. McConnell | University of Notre Dame |
| Alexei P. Orlov | University of Notre Dame |
| Sergei Rouvimov | University of Notre Dame |
| Gregory L. Snider | University of Notre Dame |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| Ni |
Keywords
Notes
| 412 |