Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date:
2015-11-05
DOI:
http://dx.doi.org/10.1116/1.4935960

Author Information

Name Institution
Golnaz KarbasianUniversity of Notre Dame
Michael S. McConnellUniversity of Notre Dame
Alexei P. OrlovUniversity of Notre Dame
Sergei RouvimovUniversity of Notre Dame
Gregory L. SniderUniversity of Notre Dame

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Ni

Notes

412