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Publication Information

Title: Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A122 (2016)

Date: 2015-11-05

DOI: http://dx.doi.org/10.1116/1.4935960

Author Information

Name

Institution

University of Notre Dame

University of Notre Dame

University of Notre Dame

University of Notre Dame

University of Notre Dame

Films

Deposition Temperature Range N/A

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

Ni

Keywords

Notes

412


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