Title: Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
Type: Journal
Info: Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date: 2015-11-05
DOI: http://dx.doi.org/10.1116/1.4935960
Name
Institution
University of Notre Dame
University of Notre Dame
University of Notre Dame
University of Notre Dame
University of Notre Dame
Characteristic
Analysis
Diagnostic
Chemical Composition, Impurities
TEM, Transmission Electron Microscope
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Images
TEM, Transmission Electron Microscope
-
Ni
412
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