Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions

Type:
Journal
Info:
J. Phys. Chem. C, 2020, 124 (9), pp 5495-5505
Date:
2020-02-10

Author Information

Name Institution
Norah HornsveldEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films


Plasma POx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Surface Reactions
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Substrates

Si with native oxide
InP

Notes

POx process does not show saturative behavior and reacts with air upon exposure.
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