Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
Type:
Journal
Info:
J. Phys. Chem. C, 2020, 124 (9), pp 5495-5505
Date:
2020-02-10
Author Information
Name | Institution |
---|---|
Norah Hornsveld | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Mariadriana Creatore | Eindhoven University of Technology |
Films
Plasma AlPxOy
Plasma POx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Surface Reactions
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Substrates
Si with native oxide |
InP |
Notes
POx process does not show saturative behavior and reacts with air upon exposure. |
1458 |