Publication Information

Title:
Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Acta Materialia 61 (2013) 7660 - 7670
Date:
2013-09-05

Author Information

Name Institution
Takane UsuiStanford University
Christine A. DonnellyStanford University
Manca LogarStanford University
Robert SinclairStanford University
Joop SchoonmanStanford University
Fritz B. PrinzStanford University

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Notes

Nice breakdown theory section,
592