Atomic Layer Deposition of the Conductive Delafossite PtCoO2

Type:
Journal
Info:
Adv. Mater. Interfaces 2022, 9, 2200013
Date:
2022-01-29
DOI:
https://doi.org/10.1002/admi.202200013

Author Information

Name Institution
Dirk J. HagenMax Planck Institute of Microstructure Physics
Jiho YoonMax Planck Institute of Microstructure Physics
Haojie ZhangMax Planck Institute of Microstructure Physics
Bodo KalkofenMax Planck Institute of Microstructure Physics
Mindaugas SilinskasMax Planck Institute of Microstructure Physics
Felix BörrnertMax Planck Institute of Microstructure Physics
Hyeon HanMax Planck Institute of Microstructure Physics
Stuart S. P. ParkinMax Planck Institute of Microstructure Physics

Films

Plasma PtCoO2

Hardware used: Oxford Instruments FlexAL
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
Where to buy precursor
Bis(N-t-butyl-N'-ethylpropanimidamidato) cobalt(II)
CAS#: 1011477-51-2
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-320C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Quantum Design PPMS

Characteristic: Electron Density, ne
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Magnetic Properties
Analysis: -
Diagnostic: -

Substrates

Silicon
Sapphire
YIG, Y3Fe5O12

Notes

1681