Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy

Type:
Journal
Info:
J. Am. Chem. Soc., 2017, 139 (26), pp 8960-8970
Date:
2017-06-09
DOI:
http://dx.doi.org/10.1021/jacs.7b03211

Author Information

Name Institution
Marco FavaroLawrence Berkeley National Laboratory
Jinhui YangLawrence Berkeley National Laboratory
Silvia NappiniIOM Laboratorio Nazionale TASC, CNR
Elena MagnanoIOM Laboratorio Nazionale TASC, CNR
Francesca M. TomaLawrence Berkeley National Laboratory
Ethan J. CrumlinLawrence Berkeley National Laboratory
Junko YanoLawrence Berkeley National Laboratory
Ian D. SharpLawrence Berkeley National Laboratory

Films

Plasma CoOx

Hardware used: Oxford Instruments FlexAL
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Electrochemical Performance
Analysis: Three Electrode
Diagnostic: -

Substrates

Silicon

Notes

1043