Publication Information

Title:
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
Type:
Journal
Info:
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Date:
2014-06-01

Author Information

Name Institution
Katrina A. MorganUniversity of Southampton
Ruomeng HuangUniversity of Southampton
Stuart PearceUniversity of Southampton
C.H. de GrootUniversity of Southampton

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

TiN

Keywords

Resistance RAM

Notes

Oxford Instruments FlexAL PEALD HfO2 for resistive RAM device study.
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