Densification of Thin Aluminum Oxide Films by Thermal Treatments
Type:
Journal
Info:
Materials Sciences and Applications, 2014, 5, 628-638
Date:
2014-06-04
Author Information
| Name | Institution |
|---|---|
| V. Cimalla | Fraunhofer Institute for Applied Solid State Physics |
| M. Baeumler | Fraunhofer Institute for Applied Solid State Physics |
| Lutz Kirste | Fraunhofer Institute for Applied Solid State Physics |
| M. Prescher | Fraunhofer Institute for Applied Solid State Physics |
| B. Christian | Fraunhofer Institute for Applied Solid State Physics |
| T. Passow | Fraunhofer Institute for Applied Solid State Physics |
| Fouad Benkhelifa | Fraunhofer Institute for Applied Solid State Physics |
| Frank Bernhardt | Fraunhofer Institute for Applied Solid State Physics |
| G. Eichapfel | Ilmenau University of Technology |
| M. Himmerlich | Ilmenau University of Technology |
| S. Krischok | Ilmenau University of Technology |
| J. Pezoldt | Ilmenau University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Unknown
Analysis: FTIR Spectroscopic Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| 4H n-SiC(0001) |
Notes
| AlOx samples annealed in N2 for 1 hour at 500 - 1025C. |
| 145 |