
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Type:
Journal
Info:
Applied Physics Letters 120, 172901 (2022)
Date:
2022-04-16
Author Information
Name | Institution |
---|---|
E. V. Skopin | Grenoble Alps University (UGA) |
N. Guillaume | Grenoble Alps University (UGA) |
L. Alrifai | Grenoble Alps University (UGA) |
Patrice Gonon | Grenoble Alps University (UGA) |
Ahmad Bsiesy | Grenoble Alps University (UGA) |
Films
Plasma TiN
Plasma Gd:HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Remanent Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Coercive Field
Analysis: P-V, Polarization-Voltage Measurements
Substrates
SiO2 |
TiN |
Notes
1688 |