Publication Information

Title: Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Type: Journal

Info: Microelectronic Engineering 161 (2016) 7 - 12

Date: 2016-03-21

DOI: http://dx.doi.org/10.1016/j.mee.2016.03.038

Author Information

Name

Institution

University of Southampton

University of Southampton

University of Southampton

University of Southampton

University of Southampton

Films

Deposition Temperature = 190C

557-20-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Resistivity, Sheet Resistance

Hall Measurements

Nanometrics HL5500

Carrier Concentration

Hall Measurements

Nanometrics HL5500

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL 7500F

Resistive Switching

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

SiO2

TiN

Keywords

Resistive Switch

Notes

781



Shortcuts



© 2014-2019 plasma-ald.com