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Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 161 (2016) 7 - 12
Date:
2016-03-21
DOI:
http://dx.doi.org/10.1016/j.mee.2016.03.038

Author Information

Name Institution
Ruomeng HuangUniversity of Southampton
Kai SunUniversity of Southampton
Kian S. KiangUniversity of Southampton
Katrina A. MorganUniversity of Southampton
C.H. de GrootUniversity of Southampton

Films

Plasma ZnO

Hardware used: Oxford Instruments FlexAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 190C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 7500F

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

SiO2
TiN

Notes

781