Publication Information

Title:
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 161 (2016) 7 - 12
Date:
2016-03-21

Author Information

Name Institution
Ruomeng HuangUniversity of Southampton
Kai SunUniversity of Southampton
Kian S. KiangUniversity of Southampton
Katrina A. MorganUniversity of Southampton
C.H. de GrootUniversity of Southampton

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2
TiN

Keywords

Resistive Switch

Notes

781