Publication Information

Title:
Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
Type:
Journal
Info:
Applied Physics Letters 106, 102107 (2015)
Date:
2015-03-06

Author Information

Name Institution
Ye JiaUniversity at Buffalo
Ke ZengUniversity at Buffalo
Robert M. WallaceUniversity at Buffalo
Joseph A. GardellaUniversity at Buffalo
Uttam SingisettiUniversity at Buffalo

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements

Substrates

Ga2O3
Silicon

Keywords

Notes

Combined electrical and XPS data to establish band alignment between Ga2O3 substrate and Oxford Instruments FlexAL PEALD SiO2.
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