Publication Information

Title: Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)

Type: Journal

Info: Applied Physics Letters 106, 102107 (2015)

Date: 2015-03-06

DOI: http://dx.doi.org/10.1063/1.4915262

Author Information

Name

Institution

University at Buffalo

University at Buffalo

University at Buffalo

University at Buffalo

University at Buffalo

Films

Deposition Temperature = 300C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Conduction Band Offset

I-V, Current-Voltage Measurements

Unknown

Substrates

Ga2O3

Silicon

Keywords

Notes

Combined electrical and XPS data to establish band alignment between Ga2O3 substrate and Oxford Instruments FlexAL PEALD SiO2.

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