Publication Information

Title:
Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
Type:
Journal
Info:
Applied Physics Letters 107, 014102 (2015)
Date:
2015-06-25

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
Koen de PeuterEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Substrates

Keywords

Notes

FlexAL PEALD SiNx plasma gas residence time study.
331