Publication Information

Title: Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Type: Journal

Info: Applied Physics Letters 107, 014102 (2015)

Date: 2015-06-25

DOI: http://dx.doi.org/10.1063/1.4926366

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 200-400C

186598-40-3

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Wet Etch Resistance

Wet Etch

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

OES

OES, Optical Emission Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Substrates

Keywords

Notes

FlexAL PEALD SiNx plasma gas residence time study.

331



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