Publication Information

Title: Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Type: Journal

Info: Applied Physics Letters 107, 014102 (2015)

Date: 2015-06-25

DOI: http://dx.doi.org/10.1063/1.4926366

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 200-400C

186598-40-3

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Wet Etch Resistance

Wet Etch

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

OES

OES, Optical Emission Spectroscopy

-

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Substrates

Keywords

Notes

FlexAL PEALD SiNx plasma gas residence time study.

331



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