Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 012410 (2021)
Date:
2020-12-11
DOI:
http://dx.doi.org/10.1116/6.0000655

Author Information

Name Institution
Samia BelahcenGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)
Ahmad BsiesyGrenoble Alps University (UGA)
Ahmad ChakerGrenoble Alps University (UGA)
Moustapha JaffalGrenoble Alps University (UGA)
Taguhi YeghoyanGrenoble Alps University (UGA)
Marceline BonvalotGrenoble Alps University (UGA)

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Substrates

SiO2

Notes

1661