Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene

Type:
Journal
Info:
Journal of Physics: Conference Series 917 (2017) 032039
Date:
2017-11-01
DOI:
https://doi.org/10.1088/1742-6596/917/3/032039

Author Information

Name Institution
Iosif E. ClementeMoscow Institute of Physics and Technology
Andrey V. MiakonkikhMoscow Institute of Physics and Technology
O KononenkoRussian Academy of Sciences
V MatveevRussian Academy of Sciences
Konstantin V. RudenkoMoscow Institute of Physics and Technology

Films

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000X

Characteristic: Substrate Temperature
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000X

Characteristic: Damage, Defects
Analysis: Raman Spectroscopy
Diagnostic: Bruker Senterra Raman microscope

Substrates

Graphene

Notes

1073