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Publication Information

Title: Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency

Type: Journal

Info: Advanced Materials Volume 26, Issue 17, pages 2755-2761, May 7, 2014

Date: 2014-01-28

DOI: http://dx.doi.org/10.1002/adma.201304419

Author Information

Name

Institution

Yichi Zhang

University of California - Santa Barbara (UCSB)

Films

Thermal Al2O3 using Oxford Instruments FlexAL

Deposition Temperature = 300C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Water, H2O

7732-18-5

Plasma HfO2 using Oxford Instruments FlexAL

Deposition Temperature = 100C

TEMAH, Tetrakis[(EthylMethyl)Amido]Hafnium, [(EtMe)N]4Hf

352535-01-4

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

214


Mark Sowa

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