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Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
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Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
Type:
Journal
Info:
Advanced Materials Volume 26, Issue 17, pages 2755-2761, May 7, 2014
Date:
2014-01-28
Author Information
| Name | Institution |
|---|---|
| Yichi Zhang | University of California - Santa Barbara (UCSB) |
Films
Thermal Al2O3
Plasma HfO2
Film/Plasma Properties
Substrates
Keywords
Notes
| 214 |