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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
Type:
Journal
Info:
Advanced Materials Volume 26, Issue 17, pages 2755-2761, May 7, 2014
Date:
2014-01-28
Author Information
| Name | Institution |
|---|---|
| Yichi Zhang | University of California - Santa Barbara (UCSB) |
Films
Thermal Al2O3
Plasma HfO2
Film/Plasma Properties
Substrates
Keywords
Notes
| 214 |