Publication Information

Title: Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices

Type: Conference Proceedings

Info: 2016 46th European Solid-State Device Research Conference (ESSDERC)

Date: 2016-09-12

DOI: http://dx.doi.org/10.1109/ESSDERC.2016.7599611

Author Information

Name

Institution

K. Fleck

RWTH Aachen University

U. Böttger

RWTH Aachen University

R. Waser

RWTH Aachen University

N. Aslam

Peter-Grünberg Institute

S. Hoffmann-Eifert

Peter-Grünberg Institute

S. Menzel

Peter-Grünberg Institute

Films

Plasma SrTiO3 using Oxford Instruments FlexAL

Deposition Temperature = 350C

Hyper-Sr, bis(tri-isopropylcyclopentadienyl)strontium with 1,2-demthoxy-ethane adduct, Sr(iPr3Cp)2DME

0-0-0

Air Liquide Star-Ti, Ti(CpMe3)(OMe)3

123927-75-3

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

931


Mark Sowa

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