Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 5, N110-N114
Date:
2013-02-25

Author Information

Name Institution
Daming WeiKansas State University
T. HossainKansas State University
Nelson Y. GarcesU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
H. M. Meyer IIIOak Ridge National Laboratory
M. J. KirkhamOak Ridge National Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
J. H. EdgarKansas State University

Films


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

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