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Publication Information

Title: Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

Type: Journal

Info: ECS J. Solid State Sci. Technol. 2013 volume 2, issue 5, N110-N114

Date: 2013-02-25

DOI: http://dx.doi.org/10.1149/2.010305jss

Author Information

Name

Institution

Kansas State University

Kansas State University

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Oak Ridge National Laboratory

Oak Ridge National Laboratory

U.S. Naval Research Laboratory

Kansas State University

Films

Deposition Temperature Range = 100-300C

3275-24-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

Ellipsometry

J.A. Woollam alpha-SE

Refractive Index

Ellipsometry

J.A. Woollam alpha-SE

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

Si(100)

Keywords

Notes

597


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