In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd

Type:
Journal
Info:
2016 J. Phys. D: Appl. Phys. 49 115504
Date:
2015-12-14
DOI:
http://dx.doi.org/10.1088/0022-3727/49/11/115504

Author Information

Name Institution
Noémi LeickEindhoven University of Technology
J. W. WeberEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology
Matthieu J. WeberEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Pt

Hardware used: Custom Remote Inductively Coupled Plasma
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma Pd

Hardware used: Custom Remote Inductively Coupled Plasma
palladium(II) hexafluoroacetylacetonate, Pd(hfac)2
CAS#: 64916-48-9
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 300C

Thermal Ru

Hardware used: Oxford Instruments FlexAL
Cyclopentadienyl ethyl (dicarbonyl) Ruthenium, CpRu(CO)2Et
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Dielectric Function
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: FTIR reflectance
Diagnostic: Bruker Optics Tensor 27

Substrates

Silicon
Al2O3

Notes

529