Publication Information

Title: In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd

Type: Journal

Info: 2016 J. Phys. D: Appl. Phys. 49 115504

Date: 2015-12-14

DOI: http://dx.doi.org/10.1088/0022-3727/49/11/115504

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma Pt using Custom ICP

Deposition Temperature = 100C

94442-22-5

7782-44-7

Plasma Pd using Custom ICP

Deposition Temperature = 300C

64916-48-9

1333-74-0

Deposition Temperature = 400C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Dielectric Function

Ellipsometry

J.A. Woollam M-2000U

Thickness

XRR, X-Ray Reflectivity

-

Thickness

SEM, Scanning Electron Microscopy

-

Resistivity, Sheet Resistance

Four-point Probe

-

Resistivity, Sheet Resistance

FTIR reflectance

Bruker Optics Tensor 27

Substrates

Silicon

Al2O3

Keywords

Notes

529



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