Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 6, Issue 1, pages 4--6, 2012
Date:
2011-10-10
DOI:
http://dx.doi.org/10.1002/pssr.201105445

Author Information

Name Institution
Bram HoexNational University Singapore
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
J. SchmidtInstitute for Solar Energy Research Hamelin (ISFH)
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Passivation
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Silicon

Notes

698