
Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 6, Issue 1, pages 4--6, 2012
Date:
2011-10-10
Author Information
Name | Institution |
---|---|
Bram Hoex | National University Singapore |
Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
J. Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Rolf Brendel | Institute for Solar Energy Research Hamelin (ISFH) |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Passivation
Analysis: Photoconductance
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
Silicon |
Keywords
Passivation |
Notes
698 |