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Publication Information

Title: Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

Type: Journal

Info: physica status solidi (RRL) - Rapid Research Letters Volume 6, Issue 1, pages 4--6, 2012

Date: 2011-10-10

DOI: http://dx.doi.org/10.1002/pssr.201105445

Author Information

Name

Institution

National University Singapore

Eindhoven University of Technology

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Passivation

Photoconductance

Sinton WCT-100

Thickness

Ellipsometry

Unknown

Substrates

Silicon

Keywords

Passivation

Notes

698


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