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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 6, Issue 1, pages 4--6, 2012
Date:
2011-10-10
Author Information
| Name | Institution |
|---|---|
| Bram Hoex | National University Singapore |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| J. Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
| Rolf Brendel | Institute for Solar Energy Research Hamelin (ISFH) |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Passivation
Analysis: Photoconductance
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Silicon |
Keywords
| Passivation |
Notes
| 698 |