On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Type:
Journal
Info:
ACS Appl. Electron. Mater. 2021, 3, 3185-3199
Date:
2021-06-11
DOI:
http://dx.doi.org/10.1021/acsaelm.1c00379

Author Information

Name Institution
Reyhaneh MahloujiEindhoven University of Technology
Yue ZhangEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Jan P. HofmannEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Abhay A. SagadeSRM Institute of Science and Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma MoOx

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Silicon

Notes

1607