Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 030402 (2021)
Date:
2021-03-11
DOI:
http://dx.doi.org/10.1116/6.0000969

Author Information

Name Institution
Moustapha JaffalGrenoble Alps University (UGA)
Taguhi YeghoyanGrenoble Alps University (UGA)
Gauthier LefèvreGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
N. PossemeCEA - LETI MINATEC
Christophe ValléeGrenoble Alps University (UGA)
Marceline BonvalotGrenoble Alps University (UGA)

Films

Plasma Ta2O5

Hardware used: Oxford Instruments FlexAL
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Silicon

Keywords

Substrate Biasing
Area Selective

Notes

1563