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Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 030402 (2021)
Date:
2021-03-11
Author Information
| Name | Institution |
|---|---|
| Moustapha Jaffal | Grenoble Alps University (UGA) |
| Taguhi Yeghoyan | Grenoble Alps University (UGA) |
| Gauthier Lefèvre | Grenoble Alps University (UGA) |
| Rémy Gassilloud | CEA - LETI MINATEC |
| N. Posseme | CEA - LETI MINATEC |
| Christophe Vallée | Grenoble Alps University (UGA) |
| Marceline Bonvalot | Grenoble Alps University (UGA) |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
Notes
| 1563 |