Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 030402 (2021)
Date:
2021-03-11

Author Information

Name Institution
Moustapha JaffalGrenoble Alps University (UGA)
Taguhi YeghoyanGrenoble Alps University (UGA)
Gauthier LefèvreGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
N. PossemeCEA - LETI MINATEC
Christophe ValléeGrenoble Alps University (UGA)
M. BonvalotGrenoble Alps University (UGA)

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Keywords

Substrate Biasing
Area Selective

Notes

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