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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
  • Surface modification

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Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A131 (2012)
Date:
2011-11-01
DOI:
http://dx.doi.org/10.1116/1.3664762

Author Information

Name Institution
Wytze KeuningEindhoven University of Technology
P. van de WeijerPhilips
H. LifkaPhilips
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Calcium Test
Diagnostic: Custom

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Diagnostic: Custom

Characteristic: Barrier Characteristics
Analysis: OLED Illumination
Diagnostic: Custom

Substrates

SiO2
OLED

Notes

633