Publication Information

Title: Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates

Type: Journal

Info: Journal of The Electrochemical Society, 156 (4) H255-H262 (2009)

Date: 2008-11-13

DOI: http://dx.doi.org/10.1149/1.3076143

Author Information

Name

Institution

Sonja Sioncke

IMEC

Films

Thermal Al2O3 using ASM Pulsar 2000

Deposition Temperature = 300C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Water, H2O

7732-18-5

Plasma Al2O3 using Oxford Instruments FlexAL

Deposition Temperature = 300C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

198


Mark Sowa

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