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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (4) H255-H262 (2009)
Date:
2008-11-13
Author Information
| Name | Institution |
|---|---|
| Sonja Sioncke | IMEC |
Films
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Substrates
Keywords
Notes
| 198 |