The publication database currently has 1609 entries.

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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition Ni₈₀Fe₂₀ nanotubes with optimized spintronic functionalities prepared by atomic layer deposition On the Contact Optimization of ALD-Based MoS₂ FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Search 1609 plasma ALD publications by:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Thermal and Plasma Enhanced Atomic Layer Deposition of Al₂O₃ on GaAs Substrates

Type:

Journal

Info:

Journal of The Electrochemical Society, 156 (4) H255-H262 (2009)

Date:

2008-11-13

DOI:

http://dx.doi.org/10.1149/1.3076143

Author Information

Name	Institution
Sonja Sioncke	IMEC

Films

Thermal Al₂O₃

Hardware used: ASM Pulsar 2000

TMA, trimethyl aluminum, AlMe₃

CAS#: 75-24-1

Where to buy precursor

H₂O, Water

CAS#: 7732-18-5

Deposition Temperature = 300C

Plasma Al₂O₃

Hardware used: Oxford Instruments FlexAL

TMA, trimethyl aluminum, AlMe₃

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Keywords

Notes

198

The publication database currently has 1609 entries.

Search from:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

85 Theses