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Ideal for:
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Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates

Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (4) H255-H262 (2009)
Date:
2008-11-13
DOI:
http://dx.doi.org/10.1149/1.3076143

Author Information

Name Institution
Sonja SionckeIMEC

Films

Thermal Al2O3

Hardware used: ASM Pulsar 2000
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

198