Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 120, Part A, 2014, Pages 436 - 440
Date:
2013-08-13
DOI:
http://dx.doi.org/10.1016/j.solmat.2013.06.049

Author Information

Name Institution
Boris VeithInstitute for Solar Energy Research Hamelin (ISFH)
Tobias OhrdesInstitute for Solar Energy Research Hamelin (ISFH)
Florian WernerInstitute for Solar Energy Research Hamelin (ISFH)
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)
Pietro P. AltermattInstitute for Solar Energy Research Hamelin (ISFH)
Nils-Peter HarderInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Lifetime
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Silicon

Notes

570