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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 120, Part A, 2014, Pages 436 - 440
Date:
2013-08-13
Author Information
| Name | Institution |
|---|---|
| Boris Veith | Institute for Solar Energy Research Hamelin (ISFH) |
| Tobias Ohrdes | Institute for Solar Energy Research Hamelin (ISFH) |
| Florian Werner | Institute for Solar Energy Research Hamelin (ISFH) |
| Rolf Brendel | Institute for Solar Energy Research Hamelin (ISFH) |
| Pietro P. Altermatt | Institute for Solar Energy Research Hamelin (ISFH) |
| Nils-Peter Harder | Institute for Solar Energy Research Hamelin (ISFH) |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Lifetime
Analysis: PL, PhotoLuminescence
Substrates
| Silicon |
Keywords
| Passivation |
Notes
| 570 |