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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 120, Part A, 2014, Pages 436 - 440
Date:
2013-08-13
Author Information
| Name | Institution |
|---|---|
| Boris Veith | Institute for Solar Energy Research Hamelin (ISFH) |
| Tobias Ohrdes | Institute for Solar Energy Research Hamelin (ISFH) |
| Florian Werner | Institute for Solar Energy Research Hamelin (ISFH) |
| Rolf Brendel | Institute for Solar Energy Research Hamelin (ISFH) |
| Pietro P. Altermatt | Institute for Solar Energy Research Hamelin (ISFH) |
| Nils-Peter Harder | Institute for Solar Energy Research Hamelin (ISFH) |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Lifetime
Analysis: PL, PhotoLuminescence
Substrates
| Silicon |
Keywords
| Passivation |
Notes
| 570 |