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Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells

Type:
Conference Proceedings
Info:
Proceedings of the 25th European Photovoltaic Solar Energy Conference
Date:
2010-09-06
DOI:
http://www.isfh.de/institut_solarforschung/files/25eupvsec_schmidt.pdf

Author Information

Name Institution
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)
Florian WernerInstitute for Solar Energy Research Hamelin (ISFH)
Boris VeithInstitute for Solar Energy Research Hamelin (ISFH)
D ZielkeInstitute for Solar Energy Research Hamelin (ISFH)
Robert BockInstitute for Solar Energy Research Hamelin (ISFH)
Veronica TibaSoLayTec
Paul PoodtTNO
Fred RoozeboomTNO
Andrew LiThe Australian National University
Andres CuevasThe Australian National University
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Open Circuit Voltage
Analysis: -
Diagnostic: -

Characteristic: Short Circuit Current
Analysis: -
Diagnostic: -

Characteristic: Fill Factor
Analysis: -
Diagnostic: -

Characteristic: Efficiency
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

Compares plasma film with conventional thermal and spatial thermal ALD.
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