Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
Type:
Journal
Info:
Nanoscale 2016, Volume 115, Part B, Issue , pp 103 - 108
Date:
2015-09-05
Author Information
Name | Institution |
---|---|
Vladamir Djara | IBM Research, Zurich Research Lab |
Lukas Czornomaz | IBM Research, Zurich Research Lab |
Veeresh Deshpande | IBM Research, Zurich Research Lab |
Nicolas Daix | IBM Research, Zurich Research Lab |
Emanuele Uccelli | IBM Research, Zurich Research Lab |
Daniele Caimi | IBM Research, Zurich Research Lab |
Marilyne Sousa | IBM Research, Zurich Research Lab |
Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Band Gap
Analysis: -
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Breakdown Voltage
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Characteristic: Transistor Characteristics
Analysis: -
Substrates
InGaAs |
Notes
549 |