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Publication Information

Title: Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Type: Journal

Info: Nanoscale 2016, Volume 115, Part B, Issue , pp 103 - 108

Date: 2015-09-05

DOI: http://dx.doi.org/10.1016/j.sse.2015.08.018

Author Information

Name

Institution

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Band Gap

Unknown

Unknown

Dielectric Constant, Permittivity

Unknown

Unknown

Breakdown Voltage

Unknown

Unknown

Interface Trap Density

Unknown

Unknown

Transistor Characteristics

Unknown

Unknown

Substrates

InGaAs

Keywords

Notes

549


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