Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Type:
Journal
Info:
Nanoscale 2016, Volume 115, Part B, Issue , pp 103 - 108
Date:
2015-09-05
DOI:
http://dx.doi.org/10.1016/j.sse.2015.08.018

Author Information

Name Institution
Vladamir DjaraIBM Research, Zurich Research Lab
Lukas CzornomazIBM Research, Zurich Research Lab
Veeresh DeshpandeIBM Research, Zurich Research Lab
Nicolas DaixIBM Research, Zurich Research Lab
Emanuele UccelliIBM Research, Zurich Research Lab
Daniele CaimiIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Jean FompeyrineIBM Research, Zurich Research Lab

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Band Gap
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: -
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Substrates

InGaAs

Notes

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