Publication Information

Title: Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Type: Journal

Info: Nanoscale 2016, Volume 115, Part B, Issue , pp 103 - 108

Date: 2015-09-05

DOI: http://dx.doi.org/10.1016/j.sse.2015.08.018

Author Information

Name

Institution

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Band Gap

Unknown

-

Dielectric Constant, Permittivity

Unknown

-

Breakdown Voltage

Unknown

-

Interface Trap Density

Unknown

-

Transistor Characteristics

Unknown

-

Substrates

InGaAs

Keywords

Notes

549



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