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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Top-down fabricated ZnO nanowire transistors for application in biosensors
Type:
Journal
Info:
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 137
Date:
2012-09-07
Author Information
| Name | Institution |
|---|---|
| S. M. Sultan | University of Southampton |
| K. Sun | University of Southampton |
| M. R. R. de Planque | University of Southampton |
| P. Ashburn | University of Southampton |
| H. M. H. Chong | University of Southampton |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| SiO2 |
Keywords
| Nanowire Transistors |
Notes
| 671 |