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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Top-down fabricated ZnO nanowire transistors for application in biosensors
Type:
Journal
Info:
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 137
Date:
2012-09-07
Author Information
| Name | Institution |
|---|---|
| S. M. Sultan | University of Southampton |
| K. Sun | University of Southampton |
| M. R. R. de Planque | University of Southampton |
| P. Ashburn | University of Southampton |
| H. M. H. Chong | University of Southampton |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| SiO2 |
Keywords
| Nanowire Transistors |
Notes
| 671 |