Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
Type:
Journal
Info:
2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
Date:
2013-09-25
Author Information
| Name | Institution |
|---|---|
| S. M. Sultan | University of Technology, Malaysia |
| P. Ashburn | University of Technology, Malaysia |
| R. Ismail | University of Technology, Malaysia |
| H. M. H. Chong | University of Technology, Malaysia |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: I-V, Current-Voltage Measurements
Characteristic: Hysteresis
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiO2 |
Notes
| 611 |