Publication Information

Title:
Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
Type:
Journal
Info:
2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
Date:
2013-09-25

Author Information

Name Institution
S. M. SultanUniversity of Technology, Malaysia
P. AshburnUniversity of Technology, Malaysia
R. IsmailUniversity of Technology, Malaysia
H. M. H. ChongUniversity of Technology, Malaysia

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: I-V, Current-Voltage Measurements

Characteristic: Hysteresis
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2

Keywords

Notes

611