Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center

Type:
Journal
Info:
Progress in Photovoltaics: Research and Applications, 2016
Date:
2015-11-18
DOI:
http://dx.doi.org/10.1002/pip.2731

Author Information

Name Institution
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
Bianca LimInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

491