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Publication Information

Title: Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center

Type: Journal

Info: Progress in Photovoltaics: Research and Applications, 2016

Date: 2015-11-18

DOI: http://dx.doi.org/10.1002/pip.2731

Author Information

Name

Institution

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Passivation

Notes

491


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