Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 075009 (7pp)
Date:
2010-06-18
Author Information
| Name | Institution |
|---|---|
| J. Hinz | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| Anton J. Bauer | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| L. Frey | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
Films
Plasma NbN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Substrates
Notes
| SE model for NbN |
| 64 |