Publication Information

Title: Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application

Type: Journal

Info: Semicond. Sci. Technol. 25 (2010) 075009 (7pp)

Date: 2010-06-18

DOI: http://dx.doi.org/10.1088/0268-1242/25/7/075009

Author Information

Name

Institution

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Deposition Temperature Range N/A

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SOPRA SE-5

Resistivity, Sheet Resistance

Four-point Probe

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Resistivity, Sheet Resistance

Ellipsometry

-

Substrates

Keywords

Gate Metal

Notes

SE model for NbN

64



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