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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 075009 (7pp)
Date:
2010-06-18
Author Information
| Name | Institution |
|---|---|
| J. Hinz | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| Anton J. Bauer | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| L. Frey | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
Films
Plasma NbN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Substrates
Keywords
| Gate Metal |
Notes
| SE model for NbN |
| 64 |