Publication Information

Title:
Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 075009 (7pp)
Date:
2010-06-18

Author Information

Name Institution
J. HinzFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Anton J. BauerFraunhofer Institute for Integrated Systems and Device Technology (IISB)
L. FreyFraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Plasma NbN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry

Substrates

Keywords

Gate Metal

Notes

SE model for NbN
64