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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 158, Part 1, 2016, Pages 91 - 97
Date:
2016-05-10
DOI:
https://doi.org/10.1016/j.solmat.2016.05.025

Author Information

Name Institution
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Lifetime
Analysis: -
Diagnostic: -

Characteristic: Recovery Rate
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

861