Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma

Type:
Journal
Info:
J. Phys. Chem. C, 2021, 125 (7), pp 3913-3923
Date:
2021-01-11
DOI:
http://dx.doi.org/10.1021/acs.jpcc.0c10695

Author Information

Name Institution
Martijn F. J. VosEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology

Films

Plasma AlF

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
SF6, Sulfur Hexafluoride
CAS#: 2551-62-4
Where to buy precursor
Deposition Temperature = 200C

Plasma AlF

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
SF6, Sulfur Hexafluoride
CAS#: 2551-62-4
Where to buy precursor
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Pfeiffer Prisma QME-200

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Avantes AvaSpec-2048L

Characteristic: Surface Reactions
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vector FTIR

Substrates

Al2O3

Notes

1612