Energy-enhanced atomic layer deposition for more process and precursor versatility

Type:
Journal
Info:
Coordination Chemistry Reviews, Volume 257, Issues 23-24, 2013, Pages 3254 - 3270
Date:
2013-06-17
DOI:
http://dx.doi.org/10.1016/j.ccr.2013.06.015

Author Information

Name Institution
Stephen E. PottsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

609