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The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides

Type:
Conference Proceedings
Info:
ECS Transactions, 33 (2) 61-67 (2010)
Date:
2010-07-08
DOI:
http://dx.doi.org/10.1149/1.3485242

Author Information

Name Institution
H. B. ProfijtEindhoven University of Technology
P. KudlacekEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: Ion Flux
Analysis: Custom
Diagnostic: Custom

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics USB 2000

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: McPherson 234/302 monochrometer

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Substrates

Silicon

Notes

718