Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
Type:
Journal
Info:
Applied Physics Letters 117, 031602 (2020)
Date:
2020-07-08
Author Information
| Name | Institution |
|---|---|
| Karsten Arts | Eindhoven University of Technology |
| J. H. Deijkers | Eindhoven University of Technology |
| Tahsin Faraz | Eindhoven University of Technology |
| Riikka L. Puurunen | Aalto University |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Substrates
| Silicon |
Notes
| 1668 |