Publication Information

Title:
Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
Type:
Journal
Info:
Materials Research Bulletin Volume 87, March 2017, Pages 208-213
Date:
2016-11-28

Author Information

Name Institution
V.S. PatilNorth Maharashtra University
K.S. AgrawalNorth Maharashtra University
Anil G. KhairnarNorth Maharashtra University
B. J. ThibeaultUniversity of California - Santa Barbara (UCSB)
A.M. MahajanNorth Maharashtra University

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GeON

Keywords

Notes

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