Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
Type:
Journal
Info:
Materials Research Bulletin Volume 87, March 2017, Pages 208-213
Date:
2016-11-28
Author Information
| Name | Institution |
|---|---|
| V.S. Patil | North Maharashtra University |
| K.S. Agrawal | North Maharashtra University |
| Anil G. Khairnar | North Maharashtra University |
| B. J. Thibeault | University of California - Santa Barbara (UCSB) |
| A.M. Mahajan | North Maharashtra University |
Films
Plasma Al2O3
Plasma HfO2
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GeON |
Notes
| 945 |