Publication Information

Title:
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
Type:
Journal
Info:
Journal of Applied Physics 114, 154108 (2013)
Date:
2013-09-30

Author Information

Name Institution
Varistha ChobpattanaUniversity of California - Santa Barbara (UCSB)
Thomas E. MatesUniversity of California - Santa Barbara (UCSB)
William J. MitchellUniversity of California - Santa Barbara (UCSB)
Jack Y. ZhangUniversity of California - Santa Barbara (UCSB)
Susanne StemmerUniversity of California - Santa Barbara (UCSB)

Films

Plasma AlN



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Substrates

InGaAs

Keywords

Notes

1376