The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
Type:
Journal
Info:
Journal of Applied Physics 114, 154108 (2013)
Date:
2013-09-30
Author Information
| Name | Institution |
|---|---|
| Varistha Chobpattana | University of California - Santa Barbara (UCSB) |
| Thomas E. Mates | University of California - Santa Barbara (UCSB) |
| William J. Mitchell | University of California - Santa Barbara (UCSB) |
| Jack Y. Zhang | University of California - Santa Barbara (UCSB) |
| Susanne Stemmer | University of California - Santa Barbara (UCSB) |
Films
Plasma AlN
Thermal HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
| InGaAs |
Notes
| 1376 |