The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
Type:
Journal
Info:
Adv. Mater. Technol. 2021, 2100489
Date:
2021-06-14
Author Information
| Name | Institution |
|---|---|
| Bárbara Canto | University of Wuppertal |
| Martin Otto | Applied Micro and Optoelectronic (AMO) GmbH |
| Michael Powell | Oxford Instruments |
| Vitaliy Babenko | University of Cambridge |
| Aileen O'Mahony | Oxford Instruments |
| Harm C. M. Knoops | Oxford Instruments |
| Ravi S. Sundaram | Oxford Instruments |
| Stephan Hofmann | University of Cambridge |
| Max C. Lemme | Applied Micro and Optoelectronic (AMO) GmbH |
| Daniel Neumaier | University of Wuppertal |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Damage, Defects
Analysis: Raman Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Graphene |
| hBN |
Notes
| 1665 |