Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer

Type:
Journal
Info:
Adv. Mater. Technol. 2021, 2100489
Date:
2021-06-14
DOI:
https://doi.org/10.1002/admt.202100489

Author Information

Name Institution
Bárbara CantoUniversity of Wuppertal
Martin OttoApplied Micro and Optoelectronic (AMO) GmbH
Michael PowellOxford Instruments
Vitaliy BabenkoUniversity of Cambridge
Aileen O'MahonyOxford Instruments
Harm C. M. KnoopsOxford Instruments
Ravi S. SundaramOxford Instruments
Stephan HofmannUniversity of Cambridge
Max C. LemmeApplied Micro and Optoelectronic (AMO) GmbH
Daniel NeumaierUniversity of Wuppertal

Films

Plasma Al2O3

Hardware used: Oxford Instruments Atomfab
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Damage, Defects
Analysis: Raman Spectroscopy
Diagnostic: Horiba XploRA PLUS

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Graphene
hBN

Notes

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