Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 858, 2021, Pages 157713
Date:
2020-10-23
Author Information
Name | Institution |
---|---|
A. M. Mumlyakov | Russian Academy of Sciences |
Max V. Shibalov | Russian Academy of Sciences |
I. V. Trofimov | Russian Academy of Sciences |
M.G. Verkholetov | Russian Academy of Sciences |
Alexei P. Orlov | Russian Academy of Sciences |
G.D. Diudbin | Russian Academy of Sciences |
S.A. Evlashin | Skolkovo Institute of Science and Technology |
P.A. Nekludova | Russian Academy of Sciences |
Y. V. Anufriev | Russian Academy of Sciences |
A. M. Tagachenkov | Russian Academy of Sciences |
E. V. Zenova | Russian Academy of Sciences |
Michael A. Tarkhov | Russian Academy of Sciences |
Films
Plasma Al2O3
Plasma HfO2
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Mo |
Notes
1581 |