Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration

Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2015, 17, 22106-22114
Date:
2015-08-04
DOI:
http://dx.doi.org/10.1039/C5CP03321G

Author Information

Name Institution
Zeynep MericFriedrich-Alexander University Erlangen-Nuremberg
Christian MehringerFriedrich-Alexander University Erlangen-Nuremberg
Nicolas KarpsteinFriedrich-Alexander University Erlangen-Nuremberg
Michael P. M. JankFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Wolfgang PeukertFriedrich-Alexander University Erlangen-Nuremberg
L. FreyFriedrich-Alexander University Erlangen-Nuremberg

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

551