Publication Information

Title: Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

Type: Journal

Info: J. Vac. Sci. Technol. A 31(4), Jul/Aug 2013

Date: 2013-04-22

DOI: http://dx.doi.org/10.1116/1.4804175

Author Information

Name

Institution

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Applied Solid State Physics

Films

Deposition Temperature Range = 110-300C

75-24-1

7782-44-7

Deposition Temperature Range = 110-300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Plasma Damage

PL, PhotoLuminescence

-

Thickness

Ellipsometry

-

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Interlayer

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Stability

FTIR, Fourier Transform InfraRed spectroscopy

Bruker Equinox 55

Leakage Current

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Stress

Wafer Curvature

-

Substrates

Si(100)

GaAs

Keywords

Mechanical Properties

Notes

Oxford Instruments FlexAL comparison of PE and thermal ALD Al2O3 mechanical and electrical properties.

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