Publication Information

Title:
Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(4), Jul/Aug 2013
Date:
2013-04-22

Author Information

Name Institution
Ram Ekwal SahFraunhofer Institute for Applied Solid State Physics
Rachid DriadFraunhofer Institute for Applied Solid State Physics
Frank BernhardtFraunhofer Institute for Applied Solid State Physics
Lutz KirsteFraunhofer Institute for Applied Solid State Physics
Crenguta-Columbina LeancuFraunhofer Institute for Applied Solid State Physics
Heiko CzapFraunhofer Institute for Applied Solid State Physics
Fouad BenkhelifaFraunhofer Institute for Applied Solid State Physics
Michael MikullaFraunhofer Institute for Applied Solid State Physics
Oliver AmbacherFraunhofer Institute for Applied Solid State Physics

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Plasma Damage
Analysis: PL, PhotoLuminescence

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Interlayer
Analysis: XRR, X-Ray Reflectivity

Characteristic: Stability
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Stress
Analysis: Wafer Curvature

Substrates

Si(100)
GaAs

Keywords

Mechanical Properties

Notes

Oxford Instruments FlexAL comparison of PE and thermal ALD Al2O3 mechanical and electrical properties.
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