Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(4), Jul/Aug 2013
Date:
2013-04-22
Author Information
| Name | Institution |
|---|---|
| Ram Ekwal Sah | Fraunhofer Institute for Applied Solid State Physics |
| Rachid Driad | Fraunhofer Institute for Applied Solid State Physics |
| Frank Bernhardt | Fraunhofer Institute for Applied Solid State Physics |
| Lutz Kirste | Fraunhofer Institute for Applied Solid State Physics |
| Crenguta-Columbina Leancu | Fraunhofer Institute for Applied Solid State Physics |
| Heiko Czap | Fraunhofer Institute for Applied Solid State Physics |
| Fouad Benkhelifa | Fraunhofer Institute for Applied Solid State Physics |
| Michael Mikulla | Fraunhofer Institute for Applied Solid State Physics |
| Oliver Ambacher | Fraunhofer Institute for Applied Solid State Physics |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Plasma Damage
Analysis: PL, PhotoLuminescence
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Interlayer
Analysis: XRR, X-Ray Reflectivity
Characteristic: Stability
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Stress
Analysis: Wafer Curvature
Substrates
| Si(100) |
| GaAs |
Notes
| Oxford Instruments FlexAL comparison of PE and thermal ALD Al2O3 mechanical and electrical properties. |
| 148 |