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Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(4), Jul/Aug 2013
Date:
2013-04-22
DOI:
http://dx.doi.org/10.1116/1.4804175

Author Information

Name Institution
Ram Ekwal SahFraunhofer Institute for Applied Solid State Physics
Rachid DriadFraunhofer Institute for Applied Solid State Physics
Frank BernhardtFraunhofer Institute for Applied Solid State Physics
Lutz KirsteFraunhofer Institute for Applied Solid State Physics
Crenguta-Columbina LeancuFraunhofer Institute for Applied Solid State Physics
Heiko CzapFraunhofer Institute for Applied Solid State Physics
Fouad BenkhelifaFraunhofer Institute for Applied Solid State Physics
Michael MikullaFraunhofer Institute for Applied Solid State Physics
Oliver AmbacherFraunhofer Institute for Applied Solid State Physics

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 110-300C

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 110-300C

Film/Plasma Properties

Characteristic: Plasma Damage
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Interlayer
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Stability
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Equinox 55

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Substrates

Si(100)
GaAs

Notes

Oxford Instruments FlexAL comparison of PE and thermal ALD Al2O3 mechanical and electrical properties.
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