Publication Information

Title:
Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Materials Science, v. 53, n. 10, p. 7214--7223 (2018)
Date:
2018-01-31

Author Information

Name Institution
Yu. M. ChesnokovKurchatov Institute
Andrey V. MiakonkikhMoscow Institute of Physics and Technology
Alexander E. RogozhinMoscow Institute of Physics and Technology
Konstantin V. RudenkoMoscow Institute of Physics and Technology
A. L. VasilievKurchatov Institute

Films


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1300