Publication Information

Title: Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Materials Science, v. 53, n. 10, p. 7214--7223 (2018)

Date: 2018-01-31

DOI: http://dx.doi.org/10.1007/s10853-018-2099-5

Author Information

Name

Institution

Kurchatov Institute

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Kurchatov Institute

Films

Deposition Temperature Range = 150-300C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Si(100)

Keywords

Notes

1300



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