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Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Materials Science, v. 53, n. 10, p. 7214--7223 (2018)
Date:
2018-01-31
Author Information
| Name | Institution |
|---|---|
| Yu. M. Chesnokov | Kurchatov Institute |
| Andrey V. Miakonkikh | Moscow Institute of Physics and Technology |
| Alexander E. Rogozhin | Moscow Institute of Physics and Technology |
| Konstantin V. Rudenko | Moscow Institute of Physics and Technology |
| A. L. Vasiliev | Kurchatov Institute |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1300 |